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Ellipsometric measurement of thickness of tin oxides grown by voltammetry in phosphate solution of pH 8.7

机译:电泳法在pH 8.7的磷酸盐溶液中通过伏安法生长的氧化锡厚度的椭偏测量

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摘要

The voltammetry induced growth of tin oxides on tin in the buffer solution of 0.18 mol L-1 Na2H2PO4 and 0.18 mol L-1 KH2PO4 (pH 8.7) has been studied. Ex-situ ellipsometric mea-surements were made in an order to determine thicknesses of the grown oxides. From these results the film volume per charge unit, Vf, was calculated for different charge den-sities of the film. This parameter was used to calculate the variable ionic resistivity of the film, ρf, considered by the Ohmic model for the case of voltammetric growth of oxides on metals having a previously existing continuous film. Tin oxide films grown at 2 mV s-1 showed to be less dense for values of charge density below 50 C m-2, having Vf near 5.7x10-10 m3 C-1. For higher values of charge density, tin oxide films become denser, having Vf near 0.5x10-10 m3 C-1. The calculated values of the variable ionic resistivity of the film during voltammetric growth showed that ρf passes through a minimum (justifying the maximum in current densities). This behavior was also found by other authors in the cases of Zn, Nb, Ni and galvanized steel sheets.
机译:研究了伏安法在0.18 mol L-1 Na2H2PO4和0.18 mol L-1 KH2PO4(pH 8.7)的缓冲溶液中锡上氧化锡的生长。为了确定生长的氧化物的厚度,进行了异位椭偏测量。根据这些结果,针对膜的不同电荷密度计算出每电荷单位的膜体积Vf。该参数用于计算薄膜的可变离子电阻率ρf,这是Ohmic模型在氧化物在具有先前连续薄膜的金属上进行伏安法生长时考虑的。对于低于50 C m-2的电荷密度值,在2 mV s-1下生长的氧化锡膜显示出较低的致密性,Vf接近5.7x10-10 m3 C-1。对于更高的电荷密度值,氧化锡膜变得更致密,其Vf接近0.5x10-10 m3 C-1。伏安法生长期间薄膜的可变离子电阻率的计算值表明ρf穿过最小值(确定最大电流密度)。其他作者在Zn,Nb,Ni和镀锌钢板的情况下也发现了这种现象。

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